hexfet ? power mosfet to - 220pak g d s gate drain source application ? optimized for ups/inverter applications ? low voltage power tools benefits ? best in class performance for ups/inverter applications ? very low rds(on) at 4.5v vgs ? ultra - low gate impedance ? fully characterized avalanche voltage and current ? lead - free, rohs compliant base part number package type standard pack orderable part number form quantity IRLB8314PBF to - 220pak tube 50 IRLB8314PBF s d g absolute maximium rating symbol parameter max. units v gs gate - to - source voltage 20 v i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 171 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 120 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 130 i dm pulsed drain current ? 664 p d @t c = 25c maximum power dissipation 125 w p d @t c = 100c maximum power dissipation 63 w linear derating factor 0.83 w/c t j t stg operating junction and storage temperature range - 55 to + 175 c soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6 - 32 or m3 screw 10 lbfin (1.1 nm) thermal resistance symbol parameter typ. max. units r ? jc junction - to - case ? CCC 1.2 c/w r ? cs case - to - sink, flat greased surface 0.50 CCC r ? ja junction - to - ambient CCC 62 notes ? through ? are on page 8 v dss 30 v r ds(on) max (@ v gs = 10v) 2.4 ? (@ v gs = 4.5v) 3.2 qg (typical) 40 nc i d (silicon limited) 171 ? a i d (package limited) 130a IRLB8314PBF 1 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 d s g
IRLB8314PBF 2 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions bv dss drain - to - source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient CCC 14 CCC mv/c reference to 25c, i d = 1ma ? r ds(on) static drain - to - source on - resistance CCC 1.9 2.4 m ? v gs = 10v, i d = 68a ? CCC 2.6 3.2 v gs = 4.5v, i d = 68a ? v gs(th) gate threshold voltage 1.2 1.7 2.2 v v ds = v gs , i d = 100a ? v gs(th) / ? t j gate threshold voltage coefficient CCC - 7.0 CCC mv/c i dss drain - to - source leakage current CCC CCC 1.0 a v ds =24 v, v gs = 0v CCC CCC 150 v ds =24v,v gs = 0v,t j =125c i gss gate - to - source forward leakage CCC CCC 100 na v gs = 20v gate - to - source reverse leakage CCC CCC - 100 v gs = - 20v gfs forward transconductance 307 CCC CCC s v ds = 15v, i d =68a q g total gate charge CCC 40 60 q gs1 pre - vth gate - to - source charge CCC 6.8 CCC v ds = 15v q gs2 post - vth gate - to - source charge CCC 13 CCC nc v gs = 4.5v q gd gate - to - drain charge CCC 8.7 CCC i d = 68a q godr gate charge overdrive CCC 11.5 CCC q sw switch charge (qgs2 + qgd) 21.7 r g gate resistance CCC 1.7 CCC ? t d(on) turn - on delay time CCC 19 CCC v dd = 15v t r rise time CCC 142 CCC ns i d = 68a t d(off) turn - off delay time CCC 32 CCC r g = 1.8 ? t f fall time CCC 72 CCC v gs = 4.5v ? c iss input capacitance CCC 5050 CCC v gs = 0v c oss output capacitance CCC 890 CCC pf v ds = 15v c rss reverse transfer capacitance CCC 500 CCC ? = 1.0mhz avalanche characteristics e as (thermally limited) single pulse avalanche energy ? 180 mj e as (tested) single pulse avalanche energy tested value ? 900 i ar avalanche current ? 68 a e ar repetitive avalanche energy ? mj 12.5 diode characteristics symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 171 ? a mosfet symbol (body diode) ? showing the i sm pulsed source current CCC CCC 664 integral reverse (body diode) ? p - n junction diode. v sd diode forward voltage CCC CCC 1.0 v t j = 25c,i s = 68a,v gs = 0v ? t rr reverse recovery time CCC 21 31 ns t j = 25c i f = 68a ,v dd =15v q rr reverse recovery charge CCC 54 81 nc di/dt = 430a/s ?
IRLB8314PBF 3 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 fig 1. typical output characteristics fig 4. normalized on - resistance vs. temperature fig 5. typical capacitance vs. drain - to - source voltage fig 6. typical gate charge vs. gate - to - source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , drain-to-source current (a) ? 60s pulse width tj = 25c 2.8v vgs top 10v 5.5v 4.5v 4.0v 3.5v 3.3v 3.0v bottom 2.8v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , drain-to-source current (a) ? 60s pulse width tj = 175c 2.8v vgs top 10v 5.5v 4.5v 4.0v 3.5v 3.3v 3.0v bottom 2.8v 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) v ds = 15v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r ds(on) , drain-to-source on resistance (normalized) i d = 120a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c, capacitance (pf) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds short ed c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v gs , gate-to-source voltage (v) v ds = 24v v ds = 15v i d = 68a
IRLB8314PBF 4 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 fig 8. maximum safe operating area fig 10. threshold voltage vs. temperature fig 7. typical source - drain diode forward voltage fig 9. maximum drain current vs. case temperature fig 11. maximum effective transient thermal impedance, junction - to - case 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i sd , reverse drain current (a) t j = 25c t j = 175c v gs = 0v 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 160 180 i d , drain current (a) limited by package -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v gs (th) gate threshold voltage (v) i d = 100a i d = 250a i d = 1.0ma 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 thermal response ( z thjc ) c/w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25c tj = 175c single pulse 1msec 10msec 100sec dc l imited by package operation in this area limited by r ds (on)
IRLB8314PBF 5 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 fig 12. typical on - resistance vs. gate voltage fig 14. maximum avalanche energy vs. drain current 2 6 10 14 18 v gs , gate-to-source voltage (v) 0 2 4 6 8 10 r ds (on), drain-to -source on resistance ( m ? ) t j = 25c t j = 125c i d = 86a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 e as, single pulse avalanche energy (mj) i d t op 14a 30a bott om 68a
IRLB8314PBF 6 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 fig 18. peak diode recovery dv/dt test circuit for n - channel hexfet ? power mosfets fig 19a. unclamped inductive test circuit fig 20a. switching time test circuit fig 21a. gate charge test circuit fig 19b. unclamped inductive waveforms fig 20b. switching time waveforms fig 21b. gate charge waveform r g i a s 0 . 0 1 ? t p d . u . t l v d s + - v d d d r i v e r a 1 5 v 2 0 v t p v ( b r ) d s s i a s v ds v gs id v gs(th) q gs1 q gs2 q gd q godr
IRLB8314PBF 7 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 to - 220ab package outline (dimensions are shown in millimeters (inches)) to - 220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to - 220ab packages are not recommended for surface mount application. i n t e r n a t i o n a l p a r t n u m b e r r e c t i f i e r l o t c o d e a s s e m b l y l o g o y e a r 0 = 2 0 0 0 d a t e c o d e w e e k 1 9 l i n e c l o t c o d e 1 7 8 9 e x a m p l e : t h i s i s a n i r f 1 0 1 0 n o t e : " p " i n a s s e m b l y l i n e p o s i t i o n i n d i c a t e s " l e a d - f r e e " i n t h e a s s e m b l y l i n e " c " a s s e m b l e d o n w w 1 9 , 2 0 0 0
IRLB8314PBF 8 www.irf.com ? 2014 international rectifier submit datasheet feedback august 11, 2014 qualification information ? qualification level industrial (per jedec jesd47f) ?? moisture sensitivity level to - 220 n/a rohs compliant yes ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product - info/reliability/ ?? applicable version of jedec standard at the time of product release. ir world headquarters: 101n sepulveda blvd, el segundo, california 90245, usa to contact internatonal rectfer, please visit htp://www.irf.com/whoto - call/ notes: ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.067mh, r g = 50 ? , i as = 68a, v gs =10v. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j approximately 90c. ? this value determined from sample failure population, starting t j =25c, l=0.5mh, r g = 50 ? , i as =60a, v gs =10v. ? calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 130a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (refer to an - 1140).
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